- Product Model IPB017N10N5LFATMA1
- Brand IR (Infineon Technologies)
- RoHS 1
- Description MOSFET N-CH 100V 180A TO263-7
- Classification Integrated Circuits - ICs
-
PDF
- 1000 4.93
- 2000 4.62
Technical Details
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
- Power Dissipation (Max) 313W (Tc)
- Vgs(th) (Max) @ Id 4.1V @ 270µA
- Supplier Device Package PG-TO263-7
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 50 V
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