- Product Model IPB017N10N5ATMA1
- Brand IR (Infineon Technologies)
- RoHS 1
- Description MOSFET N-CH 100V 180A TO263-7
- Classification Integrated Circuits - ICs
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Inventory:4098
Pricing:
- 1000 4.13
- 2000 3.87
Technical Details
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
- Power Dissipation (Max) 375W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 279µA
- Supplier Device Package PG-TO263-7
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 15600 pF @ 50 V