- Product Model FDC658AP
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET P-CH 30V 4A SUPERSOT6
- Classification Integrated Circuits - ICs
-
PDF
- 3000 0.2
- 6000 0.19
- 9000 0.18
- 30000 0.17
Technical Details
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V
- Power Dissipation (Max) 1.6W (Ta)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package SuperSOT™-6
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 15 V
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