- Product Model FDS4435BZ
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET P-CH 30V 8.8A 8SOIC
- Classification Integrated Circuits - ICs
-
PDF
- 2500 0.26
- 5000 0.25
- 12500 0.23
- 25000 0.23
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
- Rds On (Max) @ Id, Vgs 20mOhm @ 8.8A, 10V
- Power Dissipation (Max) 2.5W (Ta)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package 8-SOIC
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1845 pF @ 15 V
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