- Product Model FDS6912A
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET 2N-CH 30V 6A 8SOIC
- Classification Integrated Circuits - ICs
-
PDF
- 2500 0.3
- 5000 0.29
- 12500 0.27
- 25000 0.26
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 900mW
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 6A
- Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
- Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V
- Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package 8-SOIC
Related Products
MOSFET N-CH 60V 115MA SOT23-3
Inventory: 532327
IC USB-TO-UART BRIDGE 28VQFN
Inventory: 78707
MOSFET 2P-CH 30V 6.9A 8SOIC
Inventory: 39603
MOSFET 2P-CH 30V 8A 8SOIC
Inventory: 15593
MOSFET N-CH 60V 6.2A PPAK SO-8
Inventory: 9769
TVS DIODE 6VWM 15VC SC70-5
Inventory: 32593
MOSFET P-CH 20V 900MA SOT23-3
Inventory: 13429
