- Product Model IPD95R750P7ATMA1
- Brand IR (Infineon Technologies)
- RoHS 1
- Description MOSFET N-CH 950V 9A TO252-3
- Classification Integrated Circuits - ICs
-
PDF
- 2500 0.8
- 5000 0.77
- 12500 0.74
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V
- Power Dissipation (Max) 73W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 220µA
- Supplier Device Package PG-TO252-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 950 V
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 712 pF @ 400 V
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