- Product Model NTF6P02T3G
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET P-CH 20V 10A SOT223
- Classification Integrated Circuits - ICs
-
PDF
- 4000 0.55
- 8000 0.53
- 12000 0.5
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 50mOhm @ 6A, 4.5V
- Power Dissipation (Max) 8.3W (Ta)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package SOT-223 (TO-261)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V
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