- Product Model CSD19538Q3AT
- Brand Texas Instruments
- RoHS 1
- Description MOSFET N-CH 100V 15A 8VSON
- Classification Integrated Circuits - ICs
-
PDF
- 250 0.77
- 500 0.66
- 1250 0.54
- 2500 0.5
- 6250 0.48
- 12500 0.46
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 15A (Ta)
- Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
- Power Dissipation (Max) 2.8W (Ta), 23W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 250µA
- Supplier Device Package 8-VSONP (3x3.3)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
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