- Product Model BSS119NH6327XTSA1
- Brand IR (Infineon Technologies)
- RoHS 1
- Description MOSFET N-CH 100V 190MA SOT23-3
- Classification Integrated Circuits - ICs
-
PDF
- 3000 0.1
- 6000 0.09
- 9000 0.08
- 30000 0.08
- 75000 0.08
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
- Rds On (Max) @ Id, Vgs 6Ohm @ 190mA, 10V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 2.3V @ 13µA
- Supplier Device Package PG-SOT23
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 20.9 pF @ 25 V
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