- Product Model RV2C010UNT2L
- Brand ROHM Semiconductor
- RoHS 1
- Description MOSFET N-CH 20V 1A DFN1006-3
- Classification Integrated Circuits - ICs
-
PDF
- 8000 0.08
- 16000 0.08
- 24000 0.07
- 56000 0.06
Technical Details
- Package / Case SC-101, SOT-883
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 1A (Ta)
- Rds On (Max) @ Id, Vgs 470mOhm @ 500mA, 4.5V
- Power Dissipation (Max) 400mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package VML1006
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
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