- Product Model SSM6L09FUTE85LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS 1
- Description MOSFET N/P-CH 30V 0.4A/0.2A US6
- Classification Integrated Circuits - ICs
-
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Inventory:36543
Pricing:
- 3000 0.1
- 6000 0.1
- 9000 0.09
- 30000 0.09
- 75000 0.07
Technical Details
- Package / Case 6-TSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 300mW
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 400mA, 200mA
- Input Capacitance (Ciss) (Max) @ Vds 20pF @ 5V
- Rds On (Max) @ Id, Vgs 700mOhm @ 200MA, 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1.8V @ 100µA
- Supplier Device Package US6
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