- Product Model FDMS3660S
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET 2N-CH 30V 30A/60A POWER56
- Classification Integrated Circuits - ICs
-
PDF
- 3000 0.91
- 6000 0.87
- 9000 0.85
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual) Asymmetrical
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1W
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 30A, 60A
- Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V
- Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
- Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2.7V @ 250µA
- Supplier Device Package Power56
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