- Product Model FDT86113LZ
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET N-CH 100V 3.3A SOT223-4
- Classification Integrated Circuits - ICs
-
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Inventory:25510
Pricing:
- 4000 0.38
- 8000 0.36
- 12000 0.35
- 28000 0.35
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
- Rds On (Max) @ Id, Vgs 100mOhm @ 3.3A, 10V
- Power Dissipation (Max) 2.2W (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SOT-223-4
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 50 V
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