- Product Model SI4425DDY-T1-GE3
- Brand Vishay / Siliconix
- RoHS 1
- Description MOSFET P-CH 30V 19.7A 8SO
- Classification Integrated Circuits - ICs
-
PDF
- 2500 0.33
- 5000 0.31
- 12500 0.29
- 25000 0.29
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 19.7A (Tc)
- Rds On (Max) @ Id, Vgs 9.8mOhm @ 13A, 10V
- Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-SOIC
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2610 pF @ 15 V
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