- Product Model CSD86330Q3D
- Brand Texas Instruments
- RoHS 1
- Description MOSFET 2N-CH 25V 20A 8LSON
- Classification Integrated Circuits - ICs
-
PDF
- 2500 0.95
- 5000 0.91
Technical Details
- Package / Case 8-PowerLDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 6W
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 20A
- Input Capacitance (Ciss) (Max) @ Vds 920pF @ 12.5V
- Rds On (Max) @ Id, Vgs 9.6mOhm @ 14A, 8V
- Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2.1V @ 250µA
- Supplier Device Package 8-LSON (3.3x3.3)
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