- Product Model IRFH5210TRPBF
- Brand IR (Infineon Technologies)
- RoHS 1
- Description MOSFET N-CH 100V 10A/55A 8PQFN
- Classification Integrated Circuits - ICs
-
PDF
- 4000 0.66
- 8000 0.63
- 12000 0.6
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 55A (Tc)
- Rds On (Max) @ Id, Vgs 14.9mOhm @ 33A, 10V
- Power Dissipation (Max) 3.6W (Ta), 104W (Tc)
- Vgs(th) (Max) @ Id 4V @ 100µA
- Supplier Device Package 8-PQFN (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2570 pF @ 25 V
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