- Product Model FDMS86101
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET N-CH 100V 12.4A/60A 8PQFN
- Classification Integrated Circuits - ICs
-
PDF
- 3000 0.98
- 6000 0.94
- 9000 0.91
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 12.4A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
- Power Dissipation (Max) 2.5W (Ta), 104W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package 8-PQFN (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 50 V
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