- Product Model FDS8958B
- Brand Sanyo Semiconductor/onsemi
- RoHS 1
- Description MOSFET N/P-CH 30V 6.4A 8SOIC
- Classification Integrated Circuits - ICs
-
PDF
- 2500 0.34
- 5000 0.32
- 12500 0.3
- 25000 0.29
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 900mW
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 6.4A, 4.5A
- Input Capacitance (Ciss) (Max) @ Vds 540pF @ 15V
- Rds On (Max) @ Id, Vgs 26mOhm @ 6.4A, 10V
- Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package 8-SOIC
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