- Product Model SI2308BDS-T1-GE3
- Brand Vishay / Siliconix
- RoHS 1
- Description MOSFET N-CH 60V 2.3A SOT23-3
- Classification Integrated Circuits - ICs
-
PDF
- 3000 0.18
- 6000 0.17
- 9000 0.16
- 30000 0.15
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
- Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V
- Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package SOT-23-3 (TO-236)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V
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