- Product Model SI2325DS-T1-E3
- Brand Vishay / Siliconix
- RoHS 1
- Description MOSFET P-CH 150V 530MA SOT23-3
- Classification Integrated Circuits - ICs
-
PDF
- 3000 0.4
- 6000 0.38
- 9000 0.36
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
- Power Dissipation (Max) 750mW (Ta)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Supplier Device Package SOT-23-3 (TO-236)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
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