- Product Model US1J-E3/61T
- Brand Vishay General Semiconductor – Diodes Division
- RoHS 1
- Description DIODE GEN PURP 600V 1A DO214AC
- Classification Integrated Circuits - ICs
-
PDF
- 1800 0.11
- 3600 0.1
- 5400 0.1
- 9000 0.09
- 45000 0.08
- 90000 0.08
Technical Details
- Package / Case DO-214AC, SMA
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 75 ns
- Technology Standard
- Capacitance @ Vr, F 10pF @ 4V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package DO-214AC (SMA)
- Operating Temperature - Junction -55°C ~ 150°C
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
- Current - Reverse Leakage @ Vr 10 µA @ 600 V
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