- Product Model IPD122N10N3GATMA1
- Brand IR (Infineon Technologies)
- RoHS 1
- Description MOSFET N-CH 100V 59A TO252-3
- Classification Integrated Circuits - ICs
-
PDF
- 2500 0.6
- 5000 0.57
- 12500 0.55
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 59A (Tc)
- Rds On (Max) @ Id, Vgs 12.2mOhm @ 46A, 10V
- Power Dissipation (Max) 94W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 46µA
- Supplier Device Package PG-TO252-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
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