• 库存 2646
定价:
  • 1 12.31
  • 30 9.97
  • 120 9.38
  • 510 8.5
  • 1020 7.8

技术参数

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 65A (Tc)
  • Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V
  • Power Dissipation (Max) 417W (Tc)
  • Vgs(th) (Max) @ Id 4.5V @ 6.5mA
  • Supplier Device Package TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±30V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 4740 pF @ 400 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


库存: 1500

IC DRAM 128MBIT PAR 54TSOP II

库存: 1500

  • 1: 1.89
  • 10: 1.72
  • 25: 1.68
  • 40: 1.67
  • 108: 1.49
  • 324: 1.49
  • 540: 1.46
  • 972: 1.4
  • 4968: 1.31
Top