技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type PNP - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
• Supplier Device Package SMT3
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 200 mW
• Frequency - Transition 200 MHz
• Resistor - Base (R1) 10 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant