技术参数

• Package / Case 8-PowerLDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 6W
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 20A
• Input Capacitance (Ciss) (Max) @ Vds 920pF @ 12.5V
• Rds On (Max) @ Id, Vgs 9.6mOhm @ 14A, 8V
• Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Supplier Device Package 8-LSON (3.3x3.3)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• RoHS Status ROHS3 Compliant