技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Transistor Type 1 NPN, 1 PNP - Pre-Biased
• Power - Max 150mW
• Current - Collector (Ic) (Max) 100mA
• Voltage - Collector Emitter Breakdown (Max) 50V
• Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
• Frequency - Transition 250MHz
• Resistor - Base (R1) 4.7kOhms, 47kOhms
• Supplier Device Package SOT-563
• ECCN EAR99
• HTSUS 8541.21.0075
• REACH Status REACH Unaffected