- Product Model IPG20N06S4L26ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET 2N-CH 60V 20A 8TDSON
- Categories 未分類
-
PDF
- In Stock 19061
Pricing:
- 5000 0.43
- 10000 0.41
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 33W
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 20A
- Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 25V
- Rds On (Max) @ Id, Vgs 26mOhm @ 17A, 10V
- Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2.2V @ 10µA
- Supplier Device Package PG-TDSON-8-4
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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