- Product Model SSM6L09FUTE85LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N/P-CH 30V 0.4A/0.2A US6
- Categories FET, Matrices MOSFET
-
PDF
- In Stock 36543
Pricing:
- 3000 0.1
- 6000 0.1
- 9000 0.09
- 30000 0.09
- 75000 0.07
Technical Details
- Package / Case 6-TSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 300mW
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 400mA, 200mA
- Input Capacitance (Ciss) (Max) @ Vds 20pF @ 5V
- Rds On (Max) @ Id, Vgs 700mOhm @ 200MA, 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1.8V @ 100µA
- Supplier Device Package US6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
BATTERY SPRING
In Stock: 2265
- 1: 1.22
MOSFET N/P-CH 20V SOT363
In Stock: 115501
- 3000: 0.08
- 6000: 0.08
- 9000: 0.07
- 30000: 0.07
- 75000: 0.06
- 150000: 0.05
In Stock: 1500
In Stock: 1500
MOSFET N/P-CH 30V 0.7A SC70-6
In Stock: 20664
- 3000: 0.11
- 6000: 0.11
- 9000: 0.1
- 30000: 0.09
- 75000: 0.09
